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Jean-Luc Pelouard is a French Physicist and Researcher. His achievements include research of feasibility of InP-based heterojunction bipolar transistors and; development of first InAPGaAs/InGaAs heterojunction bipolar transistor. he is currently a Research Scientist at C2N - CNRS where she conducts research in the field of optics, active plasmonics, and Nano-photonics.
The extreme light confinement provided by sub-wavelength metal-dielectric structures pushes towards revisiting the design rules of the photo-detectors. Furthermore, introducing absorbing layers in optical nano-resonators demands a dedicated electromagnetic design. Developing together semiconducting heterostructures and optical nano-antennas opens the way for performance improvements and new functionalities, introducing very promising features such as ultra-thin absorbing layers and device area much smaller than its optical cross-section. High responsivity, high-speed behavior, and carved optical response are among the expected properties of this new generation of photo-detectors. In this talk, I present a GMR InGaAs photo-detector dedicated for FPA applications as an illustration of this global design. I discuss the cross-linked properties of the optical and semiconductor structures. Experimental results show at ?=1.55 ?m an EQE of 75% and a specific detectivity of 1013 cm?Hz.W-1.